• Part: FMW60N125S2HF
  • Description: N-Channel enhancement mode power MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 764.60 KB
Download FMW60N125S2HF Datasheet PDF
Fuji Electric
FMW60N125S2HF
FMW60N125S2HF is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound Applications For switching Equivalent circuit schematic ②Drain ①②③ ① Gate ③Source Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Continuous Diode Forward Current Pulsed Diode Forward Current Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt IDP VGS IAS EAS d VDS/dt ISD ISDP d V/dt -di/dt Maximum Power Dissipation Tch Operating and Storage Temperature range Tstg Isolation Voltage (TO-220F) Viso Note - 1 : Maximum duty cycle D=0.65 Note - 2 : Limited by maximum channel temperature. Note - 3 : Tch≤150°C, See Fig.1 and Fig.2 Note - 4 : S‌ tarting Tch=25°C, IAS=2.1A, L=311m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note - 5 : ISD≤22.7A, -di/dt≤100A/μs, VDS peak≤600V, Tch≤150°C. Note - 6 : ISD≤22.7A, d V/dt≤15V/ns, VDS peak≤600V, Tch≤150°C. Characteristics 600 600 30.1 19 90.8...