FMW60N125S2HF
FMW60N125S2HF is N-Channel enhancement mode power MOSFET manufactured by Fuji Electric.
Features
Pb-free lead terminal Ro HS pliant uses Halogen-free molding pound
Applications For switching
Equivalent circuit schematic
②Drain
①②③
① Gate
③Source
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Parameter Drain-Source Voltage
Symbol
VDS VDSX
Continuous Drain Current
Pulsed Drain Current Gate-Source Voltage
Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source d V/dt
Continuous Diode Forward Current
Pulsed Diode Forward Current Peak Diode Recovery d V/dt Peak Diode Recovery -di/dt
IDP VGS IAS
EAS d VDS/dt ISD ISDP d V/dt -di/dt
Maximum Power Dissipation
Tch
Operating and Storage Temperature range
Tstg
Isolation Voltage (TO-220F)
Viso
Note
- 1 : Maximum duty cycle D=0.65 Note
- 2 : Limited by maximum channel temperature. Note
- 3 : Tch≤150°C, See Fig.1 and Fig.2 Note
- 4 : S tarting Tch=25°C, IAS=2.1A, L=311m H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current. Note
- 5 : ISD≤22.7A, -di/dt≤100A/μs, VDS peak≤600V, Tch≤150°C. Note
- 6 : ISD≤22.7A, d V/dt≤15V/ns, VDS peak≤600V, Tch≤150°C.
Characteristics
600 600 30.1 19 90.8...