K2098
K2098 is 2SK2098 manufactured by Fuji Electric.
Features
High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance .. Avalanche-proof
FUJI POWER MOSFET
FAP-III SERIES
Outline Drawings
TO-220F15
Applications
Motor controllers General purpose power amplifier DC-DC converters
3. Source
JEDEC EIAJ
SC-67
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] IDR VGS PD Tch Tstg Rating 150 20 80 20 ±20 50 +150 -55 to +150 Unit V A A A V W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=150V VGS=0V VGS=±20V VDS=0V ID=10A ID=10A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=25 Ω ID=20A VGS=10V L=100µH Tch=25°C IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C
Min.
150 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 10
Typ.
1.5 10 0.2 10 0.065 0.055 20 2300 330 150 15 20 450 100 1.00 125 0.6
Max.
2.5 500 1.0 100 0.100 0.080 3450 500 230 25 30 700 150 1.50
Units
V V µA m A n A Ω S p F ns A V ns µC
Thermal characteristics
Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case
Min.
Typ.
Max.
62.5 2.5
Units
°C/W °C/W
FUJI POWER...
