YG811S04R
YG811S04R is Silicon Diode manufactured by Fuji Electric.
Features
Low VF Super high speed switching. High reliability by planer design.
15±0.3
0.6±0.2 2.7±0.2
5.08±0.4
Applications
High speed power switching.
JEDEC EIAJ
SC-67
Connection Diagram
1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions
Rating 40
Unit V V V A A °C °C tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=122°C Square wave Sine wave 10ms
48 1500 5 120 -40 to +150 -40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=5.0A VR=VRRM Junction to case Max. 0.55 5.0 5.0 Unit V m A °C/W
Mechanical Characteristics
Mounting torque Weight Remended torque 0.3 to 0.5 2.3 N- m g
..
(40V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
Tj=100°C
Forward Current (A)
10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C
IR Reverse Current (m...
