FHX35X Description
The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave munication systems. This HEMT bines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification.
FHX35X Key Features
- High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability