FHX35X Datasheet | Fujitsu Media Devices Limited

DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave munication systems. This HEMT bines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu’s stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance. FEATURES - - - - - High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability LG PACKAGE ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Thermal Resistance Symbol VDS VGS PT Tstg Tch Rth Channel to Case Conditions Ratings 6 -5 290 -65 to 175 +175 150 Unit V V m W °C °C °C/W ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Leakage Current Gate-Source Capacitance Gate-Drain Capacitance Symbol IDSS gm Vp IGSO CGS CGD Conditions VDS=2V, VGS=0V VDS=2V, IDS=10m A VDS=2V, IDS=1m A VGS=-2V VDS=3V IDS=10m A FHX35X/002 FHX35LG/002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 0.47 0.035 Max. 85 -2.0 20 p F Unit m A m S V n A p F VDS=3V, IDS=10m A Edition 1.1 May 1998 FHX35X/002 FHX35LG/002 Low Noise HEMT Fig. 1 Drain Current vs. Drain-Source Voltage Fig. 2 Gate-Source Capacitance vs. Drain-Source Current VDS=3V 40 Drain Current (m A) Gate-Source Capacitance (p F) VGS=0V -0.2V 0.5 FHX35LG/002 0.4 30 -0.4V 20 -0.6V 10 -0.8V 0 -1.0V 1 2 3 0.3 FHX35X/002 0.2 Drain-source Voltage (V) Drain-Source Current (m A) Fig. 3 Transconductance vs. Gate-Source Voltage Gate-Source Leakage Current (m A) Fig. 4 Gate-Source Leakage Current vs. Gate-Source Voltage VDS=2V Transconductance (m S) 80 20 10...