FHX35X - Low Noise HEMT

Description

The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

Features

High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability LG.

Fujitsu Media Devices Limited

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Datasheet Details

Part number	FHX35X
Manufacturer	Fujitsu Media Devices Limited
File Size	155.21 KB
Description	Low Noise HEMT
Datasheet	FHX35X Datasheet
Additional preview pages of the FHX35X datasheet.

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FHX35LG - Low Noise HEMT

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FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu’s stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance.

Published: Mar 30, 2005 |