FRM5W232BS Datasheet | Fujitsu Semiconductor Limited

FEATURES - 2.5Gb/s APD Receiver module in an industry standard mini-DIL package - High Sensitivity: -34 d Bm (typ.) - High Differential Electrical Output - Power Overload: -4d Bm (typ.) - Integral Thermistor and Ga As IC Preamp - Wide operating temperature range (-40 to +85°C) APPLICATIONS This APD detector preamp is intended to function as an optical receiver in long haul SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10KΩ integral thermistor allows accurate monitoring of the APD temperature and facilitates the design of the APD bias control circuits. The detector preamplifier is DC coupled and has a differential electrical output. DESCRIPTION The FRM5W232BS incorporates a 30 micron In Ga As Avalanche Photodiode (APD) detector, a Ga As IC transimpedance preamplifier, and a thermistor in a mini-DIL type package. The APD is processed with modern MOVPE techniques resulting in reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd: YAG welding techniques. The BS package is designed for a surface mount PC board assembly. ABSOLUTE .. MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Symbol Tstg Top VDD VR IR(peak) Ratings -40 to +85 -40 to +85 0 to +4.5 0 to VB (Note) 2 Unit °C °C V V m A Parameter Storage Temperature Operating Case Temperature Supply Voltage APD Reverse Voltage APD Reverse Current Note: Since the VB may vary from device to device, VB data is attached to each device for reference. . Edition 1.1 June 2002 In Ga As-APD/Preamp Receiver OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, VDD=+3.3V unless otherwise specified) Parameter APD Responsivity Symbol R15 R13 APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Bandwidth Equivalent Input Noise Current Density VB γ Zt BW Test Conditions 1,550nm, M=1 1,310nm, M=1 ID=10µA...