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MB82DBS04163C Datasheet Memory Mobile Fcramtm CMOS 64 M Bit

Manufacturer: Fujitsu Semiconductor Limited

Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-11432-1E MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit).

General Description

Mobile Phone Application Specific Memory The FUJITSU MB82DBS04163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 67,108,864 storages accessible in a 16-bit format.

MB82DBS04163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in parison to regular SRAM.

The MB82DBS04163C adopts asynchronous page mode and synchronous burst mode for fast memory access as user configurable options.

Key Features

  • Asynchronous SRAM Interface Fast Access Time : tCE = 70 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Burst Read/Write Access Capability : tAC = 10 ns Max Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V Wide Operating Temperature : TA = -30 °C to +85 °C Byte Control by LB and UB Low-Power Consumption : IDDA1 = 35 mA Max IDDS1 = 90 µA Max (TA ≤ + 40°C ).
  • Various Power Down mode : Sleep 8 M-bit.

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