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MB82DP02183E-65L - 32 Mbit Mobile FCRAM

Key Features

  • _____ ______ Pseudo SRAM with Asynchronous SRAM Interface 8 Words Page Read Access Capability Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business.
  • MAIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11449-2E 32 Mbit Mobile FCRAM 3.0 V, Page Mode MB82DP02183E-65L www.DataSheet4U.com • • • • • TM FEATURES _____ ______ Pseudo SRAM with Asynchronous SRAM Interface 8 Words Page Read Access Capability Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business • MAIN SPECIFICATIONS Part Number Organization Supply Voltage Page Address Access Time (Max.) Address Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep MB82DP02183E-65L 2 M Word × 16 bit 2.6 V to 3.1 V 20 ns 65 ns 30 mA 120 μA 10 μA Note: FCRAM is a trademark of Fujitsu Limited, Japan.