MB84VA2101 Overview
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50103-2E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (× 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2100-10/MB84VA2101-10.
MB84VA2101 Key Features
- Power supply voltage of 2.7 to 3.6 V
- High performance 100 ns maximum access time
- Operating Temperature -20 to +85°C
- FLASH MEMORY
- Minimum 100,000 write/erase cycles
- Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and thirty one 64 K bytes. Any bination of sector
- Boot Code Sector Architecture MB84VA2100: Top sector MB84VA2101: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
- Data Polling and Toggle Bit feature for detection of program or erase cycle pletion