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MB84VA2103 - (MB84VA2102 / MB84VA2103) 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM

Download the MB84VA2103 datasheet PDF. This datasheet also covers the MB84VA2102 variant, as both devices belong to the same (mb84va2102 / mb84va2103) 16m (x16) flash memory & 2m (x 8) static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 20 to +85°C.
  • FLASH MEMORY.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector Architecture MB84VA2102: Top sector MB84VA2103: Bottom sec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VA2102_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MB84VA2103 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MB84VA2103. For precise diagrams, and layout, please refer to the original PDF.

FUJITSU SEMICONDUCTOR DATA SHEET DS05-50104-2E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (×16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2102-10/MB84VA2103-10 ...

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(×16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2102-10/MB84VA2103-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.