MB84VA2103 Description
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50104-2E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (×16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2102-10/MB84VA2103-10.
MB84VA2103 Key Features
- Power supply voltage of 2.7 to 3.6 V
- High performance 100 ns maximum access time
- Operating Temperature -20 to +85°C
- FLASH MEMORY
- Minimum 100,000 write/erase cycles
- Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any bination of sectors
- Boot Code Sector Architecture MB84VA2102: Top sector MB84VA2103: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address
- Data Polling and Toggle Bit feature for detection of program or erase cycle pletion