MB84VD23381EJ Description
( DataSheet : .. ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M ( × 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-85/90.
MB84VD23381EJ Key Features
- Power Supply Voltage of 2.7 V to 3.1 V for FCRAM
- Power Supply Voltage of 2.7 V to 3.3 V for Flash
- High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM)
- Operating Temperature -30 °C to +85 °C
- Package 101-ball FBGA
- Both VCCf and VCCs must be the same level when either part is being accessed
- MB84VD23381EJ-85/90
- FLASH MEMORY
- Simultaneous Read/Write Operations (Flex bank) Two virtual Banks are chosen from the bination of four physical banks. Ho
- Minimum 100,000 Write/Erase Cycles