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MB84VD23381EJ - Flash Memory / SRAM

General Description

Pin Name A19 to A0 A21, A20 DQ15 to DQ0 CEf CE1s CE2s OE WE RY/BY UBs LBs RESET WP/ACC N.C.

Key Features

  • Power Supply Voltage of 2.7 V to 3.1 V for FCRAM.
  • Power Supply Voltage of 2.7 V to 3.3 V for Flash.
  • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM).
  • Operating Temperature.
  • 30 °C to +85 °C.
  • Package 101-ball FBGA (Continued) s.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VD23381EF Flash Memory / SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M ( × 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-85/90 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) • Operating Temperature −30 °C to +85 °C • Package 101-ball FBGA (Continued) s PRODUCT LINE-UP Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.3 V 85 85 35 FCRAM VCCs* = 2.7 V to 3.1 V 85 85 50 *: Both VCCf and VCCs must be the same level when either part is being accessed.