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MB84VD23381HJ-70 - 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

Download the MB84VD23381HJ-70 datasheet PDF. This datasheet also covers the MB84VD23381HJ variant, as both devices belong to the same 64m (x16) flash memory & 16m (x16) mobile fcram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power Supply Voltage of 2.7 V to 3.1 V.
  • High Performance 70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM).
  • Operating Temperature.
  • 30 °C to +85 °C.
  • Package 56-ball BGA s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VD23381HJ_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50312-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64M (×16) FLASH MEMORY & 16M (×16) Mobile FCRAMTM MB84VD23381HJ-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM) • Operating Temperature –30 °C to +85 °C • Package 56-ball BGA s PRODUCT LINEUP Flash Supply Voltage (V) Max Random Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) +0.1 V VCCf* = 3.0 V –0.3 V 70 70 30 * : Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 56-ball plastic FBGA (Continued) FCRAM +0.1 V VCCr* = 3.0 V –0.