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MBM29DL161BE Datasheet (mbm29dl16xte/be) 16m (2mx8/1mx16) Bit Dual Operation

Manufacturer: Fujitsu Semiconductor Limited

Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Dual Operation.
  • 0.23 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
  • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fujitsu Logo MBM29DL161BE-12 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
Fujitsu Logo MBM29DL161BE-70 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
Fujitsu Logo MBM29DL161BE-90 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
Fujitsu Logo MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu
Fujitsu Logo MBM29DL161BD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MBM29DL161BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
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MBM29DL161TE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL162BD CMOS FLASH MEMORY
MBM29DL162TD CMOS FLASH MEMORY
MBM29DL162TE CMOS FLASH MEMORY
MBM29DL163BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL163BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL163BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL163TD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT

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