Datasheet Details
| Part number | MBM29DL161TD |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 1.10 MB |
| Description | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| Datasheet | MBM29DL161TD MBM29DL16xTD Datasheet (PDF) |
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Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MBM29DL161TD |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 1.10 MB |
| Description | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| Datasheet | MBM29DL161TD MBM29DL16xTD Datasheet (PDF) |
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) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No.
Ordering Part No.
VCC = 3.3 V VCC = 3.0 V +0.3 V –0.3 V +0.6 V –0.3 V MBM29DL16XTD/MBM29DL16XBD 70 — 70 70 30 — 90 90 90 35 Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TSOP (1) 48-ball plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-48P-M13) MBM29DL16XTD/BD-70/90 (Continued) • patible with JEDEC-standard mands Uses same software mands as E2PROMs • patible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in byte mode Any bination of sectors can be concurrently erased.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MBM29DL161TD-70 | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | Fujitsu |
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MBM29DL161TD-90 | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | Fujitsu |
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MBM29DL161TE-12 | 16M (2M x 8/1M x 16) BIT Dual Operation | Fujitsu |
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MBM29DL161TE-70 | 16M (2M x 8/1M x 16) BIT Dual Operation | Fujitsu |
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MBM29DL161TE-90 | 16M (2M x 8/1M x 16) BIT Dual Operation | Fujitsu |
| Part Number | Description |
|---|---|
| MBM29DL161TE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL161BD | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| MBM29DL161BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL162BD | CMOS FLASH MEMORY |
| MBM29DL162TD | CMOS FLASH MEMORY |
| MBM29DL162TE | CMOS FLASH MEMORY |
| MBM29DL163BD | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |
| MBM29DL163BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL163BE | (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation |
| MBM29DL163TD | (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT |