MBM29DL16xTE Overview
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12.
MBM29DL16xTE Key Features
- 0.23 µm Process Technology
- Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) H
- Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued)
- 70 70 30
- 90 90 90 35
- 12 120 120 50
- patible with JEDEC-standard mands Uses same software mands as E2PROMs
- patible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: TN
- Normal Bend Type, TR
- Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)
