MBM29DL16xTE Datasheet

Manufacturer: Fujitsu Semiconductor Limited

Datasheet Details

Part number	MBM29DL16xTE
Datasheet	MBM29DL16xTE_FujitsuMediaDevices.pdf
File Size	1.06 MB
Manufacturer	Fujitsu Semiconductor Limited
Description	16M (2M X 8/1M X 16) BIT Dual Operation

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12.

0.23 µm Process Technology
Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) H
Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued)
70 70 30
90 90 90 35
12 120 120 50
patible with JEDEC-standard mands Uses same software mands as E2PROMs
patible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: TN
Normal Bend Type, TR
Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)

Part Number	Description	Other Manufacturers
MBM29DL161BD-70	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT	Fujitsu
MBM29DL161BD-90	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT	Fujitsu
MBM29DL161BE-12	16M (2M x 8/1M x 16) BIT Dual Operation	Fujitsu
MBM29DL161BE-70	16M (2M x 8/1M x 16) BIT Dual Operation	Fujitsu
MBM29DL161BE-90	16M (2M x 8/1M x 16) BIT Dual Operation	Fujitsu

Part Number	Description
MBM29DL16xTD	(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL16xBD	16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL16xBE	16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL161BD	(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161BE	(MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL161TD	(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161TE	(MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL162BD	CMOS FLASH MEMORY
MBM29DL162TD	CMOS FLASH MEMORY
MBM29DL162TE	CMOS FLASH MEMORY