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MBM29DL64DF - FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT

Datasheet Summary

Description

MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each.

The device comes in 48-pin TSOP (1) and 48-ball FBGA packages.

This device is designed to be programmed in system with 3.0 V VCC supply.

Features

  • sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling.

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Datasheet Details

Part number MBM29DL64DF
Manufacturer Fujitsu Media Devices
File Size 854.54 KB
Description FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT
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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M (8 M × 8/4 M × 16) BIT Dual Operation MBM29DL64DF-70 s DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations.
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