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MBM29F016A - 16M (2M x 8) BIT FLASH MEMORY

General Description

The MBM29F016A is a 16 M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each.

The 2 M bytes of data is divided into 32 sectors of 64 K bytes for flexible erase capability.

The 8 bit of data will appear on DQ0 to DQ7.

Key Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection.
  • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type).
  • Minimum 100,000 write/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture Uniform sectors of 64 K bytes each Any.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-4E FLASH MEMORY CMOS 16M (2M × 8) BIT MBM29F016A-70/-90/-12 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) • Minimum 100,000 write/erase cycles • High performance 70 ns maximum access time • Sector erase architecture Uniform sectors of 64 K bytes each Any combination of sectors can be erased. Also supports full chip erase.