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MBM29LV008TA - 8M (1M X 8) BIT

Download the MBM29LV008TA datasheet PDF. This datasheet also covers the MBM29LV008BA variant, as both devices belong to the same 8m (1m x 8) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29LV008TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each.

The MBM29LV008TA/BA are offered in a 40-pin TSOP(I) package.

These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply.

Key Features

  • Single 3.0 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN.
  • Normal Bend Type, PTR.
  • Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 70 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV008BA_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29LV008TA-12 8M (1M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV008TA-70 8M (1M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV008TA-90 8M (1M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV008BA-12 8M (1M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV008BA-70 8M (1M x 8) BIT FLASH MEMORY Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29LV008BA 8M (1M x 8) BIT FLASH MEMORY
MBM29LV001BC 1M (128K x 8) BIT FLASH MEMORY
MBM29LV001TC 1M (128K x 8) BIT
MBM29LV002BC 2M (256K x 8) BIT FLASH MEMORY
MBM29LV002TC 2M (256K x 8) BIT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-4E FLASH MEMORY CMOS 8M (1M × 8) BIT MBM29LV008TA-70/-90/-12/MBM29LV008BA-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes Any combination of sectors can be concurrently erased.