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MBM29LV080A - 8M (1M x 8) BIT FLASH MEMORY

General Description

The MBM29LV080A is a 16M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each.

The 1M bytes of data is divided into 32 sectors of 64K bytes of flexible erase capability.

The 8 bits of data will appear on DQ0 to DQ7.

Key Features

  • Address specification is not necessary during command sequence.
  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles (Continued) s.

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📁 Similar Datasheet

Part Number Description Manufacturer
MBM29LV080A-12 8M (1M x 8) BIT FLASH MEMORY Fujitsu
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MBM29LV001BC-55 1M (128K x 8) BIT FLASH MEMORY Fujitsu
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Other Datasheets by Fujitsu Semiconductor Limited

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-4E FLASH MEMORY CMOS 8M (1M × 8) BIT MBM29LV080A-70/-90/-12 s FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.