MBM29LV650UE Overview
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations.
MBM29LV650UE Key Features
- 0.23 µm Process Technology
- Single 3.0 V read, program and erase Minimizes system level power requirements
- patible with JEDEC-standards Uses same software mands with single-power supply Flash
- Address don’t care during the mand sequence
- Industry-standard pinouts 48-pin TSOP (I) (Package suffix: TN
- Normal Bend Type, TR
- Reversed Bend Type)
- Minimum 100,000 program/erase cycles
- High performance 90 ns maximum access time
- Flexible sector architecture One hundred twenty-eight 32K word sectors Any bination of sectors can be concurrently erase
