MBM29PDS322BE Datasheet PDF - Fujitsu Media Devices 32M (2M x 16) BIT Page Dual Operation Specs

MBM29PDS322BE - 32M (2M x 16) BIT Page Dual Operation

Datasheet Summary

Description

The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each.

The device is offered in 63-ball FBGA package.

This device is designed to be programmed in system with standard system 1.8 V VCC supply.

Features

a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 1.8 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

Datasheet Details

Part number	MBM29PDS322BE
Manufacturer	Fujitsu Media Devices
File Size	694.97 KB
Description	32M (2M x 16) BIT Page Dual Operation
Datasheet	MBM29PDS322BE Datasheet
Additional preview pages of the MBM29PDS322BE datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M (2M × 16) BIT Page Dual Operation MBM29PDS322TE/BE s DESCRIPTION 10/11 The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.

Published: Oct 2, 2005 |