MBM29PDS322TE Datasheet Text
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20889-1E
FLASH MEMORY
CMOS
32M (2M × 16) BIT Page Dual Operation
MBM29PDS322TE/BE s DESCRIPTION
10/11
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. (Continued) s PRODUCT LINE-UP
Part No. Ordering Part No. VCC = 2.0 V
+0.2 V
- 0.2 V
MBM29PDS322TE/BE 10 100 45 100 35 11 115 45 115 45
Max. Random Address Access Time (ns) Max. Page Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) s PACKAGE
63-ball plastic FBGA
(BGA-63P-M01)
MBM29PDS322TE/BE 10/11
(Continued)
The device provides truly high performance non-volatile Flash memory solution. The device offers fast page access times of 45 ns with random access times of 100 ns and 115 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The page size is 4 words. The device is pin and mand set patible with JEDEC standard E2PROMs. mands are...