MBM29QM12DH Datasheet Text
FUJITSU SEMICONDUCTOR DATA SHEET
PAGE MODE FLASH MEMORY
CMOS
128M (8M× 16) BIT
DS05-20909-1E
MBM29QM12DH-60 s DESCRIPTION
The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each. The device is offered in 56-pin TSOP and 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
(Continued) s PRODUCT LINE UP
Part No.
VCC
=
3.0
V
+0.6
- 0.3
V V
Max Random Address Access Time (ns)
Max Page Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
MBM29QM12DH60
VCCQ = 2.7 V to 3.6 V
VCCQ = 1.65 V to 1.95 V
60 70
20 30
60 70
20 30 s PACKAGES
56-pin plastic TSOP (1)
80-pin plastic FBGA
(FPT-56P-M01)...
