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MBM29QM12DH - 128M (8M x 16) BIT FLASH MEMORY

Description

The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each.

The device is offered in 56-pin TSOP and 80-ball FBGA package.

This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS 128M (8M× 16) BIT DS05-20909-1E MBM29QM12DH-60 s DESCRIPTION The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each. The device is offered in 56-pin TSOP and 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC = 3.0 V +0.6 –0.3 V V Max Random Address Access Time (ns) Max Page Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29QM12DH60 VCCQ = 2.7 V to 3.6 V VCCQ = 1.65 V to 1.
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