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MBM29QM12DH-60 - 128M (8M x 16) BIT FLASH MEMORY

Download the MBM29QM12DH-60 datasheet PDF. This datasheet also covers the MBM29QM12DH variant, as both devices belong to the same 128m (8m x 16) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each.

The device is offered in 56-pin TSOP and 80-ball FBGA package.

This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29QM12DH_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29QM12DH 128M (8M x 16) BIT FLASH MEMORY Fujitsu Media Devices
MBM29BS12DH BURST MODE FLASH MEMORY Fujitsu Media Devices
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MBM29BS32LF18 BURST MODE FLASH MEMORY Fujitsu Media Devices
MBM29BS32LF25 BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT Fujitsu Media Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29BS32LF-18 BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT
MBM29BS32LF-25 BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT
MBM29BT32LF-18 BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT
MBM29BT32LF-25 BURST MODE FLASH MEMORY CMOS 32M (2M x 16) BIT
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS 128M (8M× 16) BIT DS05-20909-1E MBM29QM12DH-60 s DESCRIPTION The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each. The device is offered in 56-pin TSOP and 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC = 3.0 V +0.6 –0.3 V V Max Random Address Access Time (ns) Max Page Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29QM12DH60 VCCQ = 2.7 V to 3.6 V VCCQ = 1.65 V to 1.
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