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MB8117-12 Datasheet Nmos Dynamic Random ACcess Memory

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU MICROELECTRONICS NMOS 16,384·BIT DYNAlVIIC RANDOM ACCESS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The Fujitsu MB8117 is a fully decoded, dynamic NMOS random access memory organized as 16,384 one-bit words.

The design is optimized for highspeed, high performance applications such as mainframe memory, buffer memory peripheral storage and environments where low power dissipation and pact layout are required.

Multiplexed row and column address inputs permit the MB8117 to be housed in a standard 16-pin DIP.

Key Features

  • 16,384 x 1 RAM, 16 pin package e Silicon-gate, Double Poly NMOS single-transistor cell.
  • Address access time 100 ns max (MB8117-10) 120 ns max (MB8117-12).
  • Cycle time, 235 ns min (MB8117-10) 270 ns min (MB8117-12).
  • Low power: 182 mW max (MB8117-10) 160 mW max (MB8117-12) 19_5 mW max (Standby).
  • +5V single power supply, :t 10% tolerance.
  • On-chip substrate bias generator.
  • All Inputs TTL compatible, low capacitive load.
  • Thre. s.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB8117-10 NMOS Dynamic Random Access Memory
MB8117405B Hyper Page Mode DRAM
MB8117405B-50 Hyper Page Mode DRAM
MB8117405B-60 Hyper Page Mode DRAM
MB8117800A-60 FAST PAGE MODE DYNAMIC RAM
MB8117800A-70 FAST PAGE MODE DYNAMIC RAM
MB811643242A SDRAM
MB811643242A-100 SDRAM
MB811643242A-125 SDRAM
MB811643242A-67 SDRAM

MB8117-12 Distributor