MB81C74 Datasheet PDF

Fujitsu MB81C74

MB81C74 is a 16,384 words x 4 bns static random access memory fabricated wnh a CMOS silicon gate process. The memory uses asynchronous circunry and n may be maintained in any state for an indefinnB period of time. The MB81C74 has low power dissipation, low cost, and high performance, and n is ideally suned for use in microprocessor systems and other applications where fast access time and ease of use are required.

Part No.	MB81C74
Datasheet	MB81C74 Download
Manufacturer	Fujitsu
Description	CMOS 64K-BIT HIGH-SPEED SRAM
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Supply Voltage Input Volt~e on any pin wnh respect to ND Symbol Value Un" Vee -<l.5 to +7 V VN -{3.5 to +7 V Output Votta2e on any 110 pin with respect to G D Vcm -<l.5 to +7 V Output Current lOUT ±20 mA Power Dissipation Po 1.0 W Temperature Under Bias TBIAS -10 to +85 °C I Storage Temperature Ceramic Range I Plastic Tsro ~to+150 -45 to +125 °C Note: Permanent device damage may occ;ur Kabsolute maximum ratings are exceeded. Functional operaticn should be restricted to !he conditions as detailed in Ihe operation sections oIlhis data sheet. Exposure 10 absolu\e maximum rating conditions for ex\ended periods may atloot device reHability. © CCpwrlghl 19110 !If FUJrrsu LIMITED /Old F~u MIc_Ico.Inc. PLASTIC PACKAGE DlP-22P-M04 CERAMIC PACKAGE LCC-22C-A01 PIN ASSIGNMENT A, Vec At At A, At A,. A" A, A" A, A" A, 00, A, vo, A" vo, CS 00, GND WE 3: .,2j 1 L22..2~ A, ~ A, "" 4.. ~9 At.. ~ 5.. ..'8 Au A, 6.. TOPVIEW ~7 At! At 7.. A, 8. ~6 V04 ~5 vo, A,s 9.