MB81C75
MB81C75 is CMOS 64K-BIT HIGH-SPEED SRAM manufactured by Fujitsu Semiconductor Limited.
March 1990 Edition 3.0
DATA SHEET
FU1hsu
MB81 C75-251-301-35 CMOS 64K-BIT HIGH-SPEED SRAM
16K Words x 4 Bits High-Speed CMOS Static Random Access Memory
The Fujitsu MB81 C75 is a 16,384 words x 4 bits static random IICC8IIS memory fabricated with a CMOS silicon gate process. The memory uses asynchronous circuitry and it may be maintained in any state for an ind Cifinite period of time. All pins
..s ara TTL patible and a single V power supply is required.
The MB81 C75 has low power dissipation, low cost, and high performance, and it is ideally suited for use in microprocessor systems and other applications where fast access time and ease of usa ara required.
- Organization: 18,384 words x 4 bits
- Accasstime: i M-IAcs.25 ns max. (MB81C75-25) toe -10 ns max. i M
- l Acs. 30 ns max. (MB81 C75-30) toe -13 ns max. t M
- l Acs. 35 ns max. (MB81 C75-35) toe
- 15 ns max.
- Static operation: no clock required
- TTL patible inputs and outputs
- Three-state outputs
- mon data inputs and outputs
- Single ..s V power supply ±1 0% tolerance
- Low power standby:
550 m W max. (Active) 55 m W max. (Standby, CMOS leval) 110 m W max. (Standby, TTL level)
- Standard 24-pin Plastic Package:
MB81C75-xx P
MB81C75-xx PJ
- Standard 28-pad Ceramic Package: LCC (matal saal) MB81C75-xx CV
Absolute Maximum Ratings (See Note)
Rating
Symbol
Value
Un H
Supply Voltage
Vee
-<1.5 to +7
Input Vo~e on any pin with raspact to NO
V..
-3.5 to +7
Output Vo~e on any va pin with raspact to G...
