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MB8289 - CMOS 288K-BIT HIGH-SPEED SRAM

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April 1990 Edition 2.0 DATA SHEET 00 FUJITSU MB8289-251-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 9 Bits Static Random Access Memory with Automatic Power pown The Fujitsu MB8289 is a 32,768 words x 9 bits static random access memory with parity generator and chacker, and fabricated with CMOS technology. To obtain a smaller chip size, the cell uses NMOS transistors and resistors. This device is housed in a 300 mil DIP package with low (605 mW max.) power dissipation. All pins are TIL compatible and a single +5 V power supply is required. A separate chip select (CS) pin simplifies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and then automatically powering down the other deselected packages.