MB8287 Datasheet | Fujitsu Semiconductor Limited

April 1990 Edition 2.0 DATA SHEET MB8287-251-35 CMOS 288K-BIT HIGH-SPEED SRAM c O FUJITSU 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with parity generator and checker, and fabricated with CMOS technology. To obtain a smaller chip size, the cell uses NMOS transistors and resistors. This device is housed in a 300 mil DIP package with low (605 m W max.) power dissipation. All pins are TTL patible and a single +5 V power supply is required. A separate chip select ~ pin simplffies multipackage systems design by permitting the selection of an individual package when outputs are OR-tied, and then automatically powering down the other deselected packages. The MB8287 offers low power dissipation, low cost, and high performance. - Organization: 32,768 words x 8 bits - Static operation: no clocks or timing strobe required - Access time: t M -I.csl _25 ns max, t ACS2 - 14 ns max. (MB8287-25) 1M -I.csl _35 ns max, I.cs2 - 15 ns max. (MB8287-35) - Low power consumption: 715 m W max. (Operating) for 25 ns 605 m W max. (Operating) for 35 ns 138 m W max. (TTL Standby) 83 m W max. (CMOS Standby) - Single +5 V power supply ±1 0% tolerance - TTL patible inputs and outputs - Three-state outputs with OR-tie capacity - Chip select for simplified memory expansion - Electrostatic protection for all inputs and outputs - Standard 32-pin Plastic Packages: Skinny DIP (300 mil) MB8287-xx PSK (450 mil) MB8287-xx PF Absolute Maximum Ratings (See Note) Rating Symbol Value Unh Supply Voltage Input Volt~e on any pin with respect to NO Vee -<l.5 to +7.0 -3.5 to +7.0 Output Voltage on any 110 pin witli respect to GND VOUT -<l.5 to...