MB8287 datasheet by Fujitsu Semiconductor Limited.
| Part number | MB8287 |
|---|---|
| Datasheet | MB8287-Fujitsu.pdf |
| File Size | 530.88 KB |
| Manufacturer | Fujitsu Semiconductor Limited |
| Description | CMOS 288K-BIT HIGH-SPEED SRAM |
|
|
To obtain a smaller chip size, the cell uses NMOS transistors and resistors. This device is housed in a 300 mil DIP package with low (605 mW max.) power dissipation. All pins are TTL patible and a single +5 V power supply is required.
View all Fujitsu Semiconductor Limited datasheets
| Part Number | Description |
|---|---|
| MB8289 | CMOS 288K-BIT HIGH-SPEED SRAM |
| MB8264-15 | NMOS Dynamic Random Access Memory |
| MB8264-20 | NMOS Dynamic Random Access Memory |
| MB8264A | MOS Dynamic Random Access Memory |
| MB8265A | MOS Dynamic Random Access Memory |
| MB8266A | MOS 65536 Bit DRAM |
| MB8279RT | CMOS 72K-BIT HIGH-SPEED SRAM |
| MB8298 | CMOS 256K-BIT HIGH-SPEED SRAM |
| MB8299 | CMOS 288K-Bit High Speed BiCMOS SRAM |
| MB82B001 | 1M-BIT HIGH-SPEED BiCMOS SRAM |
