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MB8264-20 Datasheet Nmos Dynamic Random ACcess Memory

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU MICROELECTRONICS NMOS 65,536·BIT DYNAMIC RANDOM ACCESS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The Fujitsu MB8264 is a fully decoded, dynamic NMOS random access memory organized as 65536 one-bit words.

The design Is optimized for high-speed, high performance applications such as mainframe memory, buffer memory, peripheral storage and environments where low power dissipation and pact layout are required.

Multiplexed row and column address inputs permit the MB8264 to be housed In a standard 16-pln DIP.

Key Features

  • .65,536 x 1 RAM,16-pln package.
  • Sillcon-gate, Double Poly NMOS, single transistor cell.
  • Row access time: 150ns Max (MB8264-15) 200ns Max (MB8264-20).
  • Cycle time: 270ns Min (MB8264-15) 330ns Min (MB8264-20).
  • Low power: 22 mW Max Standby 275 mW Max Active (MB8264-15) 248 mW Max Active (MB8264-20).
  • :!:10% tolerance on +5V Supply.
  • On-chlp substrate bias generator.
  • All Inputs TTL compatible, low capacitive load.
  • Three-state TTL.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB8264-15 NMOS Dynamic Random Access Memory
MB8264A MOS Dynamic Random Access Memory
MB8265A MOS Dynamic Random Access Memory
MB8266A MOS 65536 Bit DRAM
MB8279RT CMOS 72K-BIT HIGH-SPEED SRAM
MB8287 CMOS 288K-BIT HIGH-SPEED SRAM
MB8289 CMOS 288K-BIT HIGH-SPEED SRAM
MB8298 CMOS 256K-BIT HIGH-SPEED SRAM
MB8299 CMOS 288K-Bit High Speed BiCMOS SRAM
MB82B001 1M-BIT HIGH-SPEED BiCMOS SRAM

MB8264-20 Distributor