MB8279RT Datasheet | Fujitsu Semiconductor Limited

April 1990 Edition 3.0 DATA SHEET MB8279RT-201-25 CMOS 72K-BIT HIGH-SPEED SRAM c P FUJITSU 8K Words x 9 Bits Synchronous CMOS Static Random Access Memory w Hh Automatic Power Down The Fujitsu MB8279RT is a 8,192 words x 9 bits static random access memory fabricated with a CMOS silicon gate process. Write operation is initiated by an internal wr~e pulse generator, which is driven by the Cl K input; therefore, external control of wr~e pulse width is not necessary. pared to the traditional RAM, the MB8279RT provides improved system level cycle time because signal skews are not involved. The MB8279RT is housed in 32-pin plastic skinny DIP and SOP packages. All pins are TTL patible and a single +5 V power supply is required. - Organization: - Access time: 8,192 words x 9 bits W:L - 20 ns max. (MB8279RT-20) I.u:s2 - t PE2 - 10 ns max. W:L - 25 ns max. (MB8279RT-25) I.u:s2 -!pez -12 ns max. - Registered addresses, CS,. WE and data inputs - Write cancel function by asynchronous C~ pin - On-chip write pulse generator - On-chip parity checker - CMOS peripheral circuits - Single +5 V power supply ±1 0% tolerance with low current drain: 120 m A max. Active operation 30 m A max. Standby operation - mon data inputs and outputs - TTL patible inputs and outputs - Three-state data outputs and open drain parity error outputs - Standard 32-pin Plastic Packages: Skinny DIP (300 mil) MB8279RT-xx PSK MB8279RT-xx PF Abso ute Max mum Rat Inas (See Note) Rating Symbol Valua Unit Supply Vohage Vee ~.51o+7.0 Input...