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MB8279RT - CMOS 72K-BIT HIGH-SPEED SRAM

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April 1990 Edition 3.0 DATA SHEET MB8279RT-201-25 CMOS 72K-BIT HIGH-SPEED SRAM cP FUJITSU 8K Words x 9 Bits Synchronous CMOS Static Random Access Memory wHh Automatic Power Down The Fujitsu MB8279RT is a 8,192 words x 9 bits static random access memory fabricated with a CMOS silicon gate process. Write operation is initiated by an internal wr~e pulse generator, which is driven by the ClK input; therefore, external control of wr~e pulse width is not necessary. Compared to the traditional RAM, the MB8279RT provides improved system level cycle time because signal skews are not involved. The MB8279RT is housed in 32-pin plastic skinny DIP and SOP packages. All pins are TTL compatible and a single +5 V power supply is required.