Fujitsu MB85R256H
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.| Part No. | MB85R256H |
|---|---|
| Datasheet | MB85R256H Download |
| Manufacturer |  Fujitsu |
| Description | Memory FRAM CMOS 256 K (32 K X 8) Bit |
| Buy | Stock & Price |
FEATURES
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● Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package Copyright©2006 FUJITSU LIMITED All rights reserved MB85R256H
● PIN ASSIGNMENTS (TOP VIEW) A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 (FPT-28P-M17) (FPT-28P-M03) OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 (FPT-28P-M19) 2 MB85R256H
● PIN DESCRIPTIONS Pin No.
