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FUJITSU MICROELECTRONICS DATA SHEET
DS05-13105-3E
Memory FRAM
CMOS
256 K (32 K × 8) Bit SPI
MB85RS256
■ DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256 adopts the Serial Peripheral Interface (SPI). The MB85RS256 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.