Datasheet Details
| Part number | MBM29DL162TD-70 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 1.10 MB |
| Description | CMOS FLASH MEMORY |
| Datasheet | MBM29DL162TD-70 MBM29DL16xTD Datasheet (PDF) |
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Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MBM29DL162TD-70 |
|---|---|
| Manufacturer | Fujitsu Semiconductor Limited |
| File Size | 1.10 MB |
| Description | CMOS FLASH MEMORY |
| Datasheet | MBM29DL162TD-70 MBM29DL16xTD Datasheet (PDF) |
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|
|
) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No.
Ordering Part No.
VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL16XTD/MBM29DL16XBD 70 — — 90 70 90 70 90 30 35 s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-pin plastic TS
| Part Number | Description |
|---|---|
| MBM29DL162TD-90 | CMOS FLASH MEMORY |
| MBM29DL162TE-12 | CMOS FLASH MEMORY |
| MBM29DL162TE-70 | CMOS FLASH MEMORY |
| MBM29DL162TE-90 | CMOS FLASH MEMORY |
| MBM29DL162BD-70 | CMOS FLASH MEMORY |
| MBM29DL162BD-90 | CMOS FLASH MEMORY |
| MBM29DL162BE-12 | 16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL162BE-70 | 16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL162BE-90 | 16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL161BD-70 | FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT |