MBM29DL162TE-90 - CMOS FLASH MEMORY

This page provides the datasheet information for the MBM29DL162TE-90, a member of the MBM29DL163TE CMOS FLASH MEMORY family.

Product Overview

Fujitsu

Part number	MBM29DL162TE-90
Manufacturer	Fujitsu
File Size	353.07 KB
Description	CMOS FLASH MEMORY
Datasheet	MBM29DL162TE-90 Datasheet
Additional preview pages of the MBM29DL162TE-90 datasheet.

0.23 µm Process Technology.
Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
Single 3.0 V read, program, and erase Minimizes system level power requirements s.

MBM29DL162TE - CMOS FLASH MEMORY (Fujitsu Media Devices)
MBM29DL162TD - CMOS FLASH MEMORY (Fujitsu Media Devices)
MBM29DL162BD - CMOS FLASH MEMORY (Fujitsu Media Devices)
MBM29DL161BD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT (Fujitsu Media Devices)
MBM29DL161BE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation (Fujitsu Media Devices)
MBM29DL161TD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT (Fujitsu Media Devices)
MBM29DL161TE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation (Fujitsu Media Devices)
MBM29DL163BD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT (Fujitsu Media Devices)
MBM29DL163BE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation (Fujitsu Media Devices)
MBM29DL163BE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation (Fujitsu Media Devices)

Other Datasheets by Fujitsu

Published: May 6, 2017 |