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D84BK2 - FIELD EFFECT POWER TRANSISTOR

This page provides the datasheet information for the D84BK2, a member of the D84BL2 FIELD EFFECT POWER TRANSISTOR family.

Datasheet Summary

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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Datasheet preview – D84BK2

Datasheet Details

Part number D84BK2
Manufacturer GE
File Size 199.50 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet D84BK2 Datasheet
Additional preview pages of the D84BK2 datasheet.
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Full PDF Text Transcription

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~D~[F[g1F FIELD EFFECT POVVER TRANSISTOR IRF510 9511 D84BL2,K2 4.0 AMPERES 100, 60 VOLTS ROS(ON) =0.6 0 The IRF510, 511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. The IRF510, 511 design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
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