D84BL2 - FIELD EFFECT POWER TRANSISTOR

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

D84BL2 field effect power transistor by GE - Datasheet Preview

Datasheet Details

Part number	D84BL2
Manufacturer	GE
File Size	199.50 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	D84BL2 Datasheet

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D84BK2	FIELD EFFECT POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

~D~[F[g1F FIELD EFFECT POVVER TRANSISTOR IRF510 9511 D84BL2,K2 4.0 AMPERES 100, 60 VOLTS ROS(ON) =0.6 0 The IRF510, 511 Series is an N-Channel Enhancement-mode Power MOSFET utilizing GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. The IRF510, 511 design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.