D84ER1 Overview
~D·~~ FIELD EFFECT POWER TRANSISTOR IRF840,841 D84ER2,R1 SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 n This series of N-:Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters,...
D84ER1 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement