D88FR1 Overview
~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFP451 ~450 D88FR1,R2 13 AMPERES 450, 500 VOLTS ROS(ON) =0.4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
D88FR1 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement