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IGT4D10 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT4D10 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT4D10

Datasheet Details

Part number	IGT4D10
Manufacturer	GE
File Size	308.85 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT4D10 Datasheet
Additional preview pages of the IGT4D10 datasheet.

Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on -150 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling -10 amps @ 100°C N-CHANNEl c . ~ CASE STYLE TO-220AB.

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Published: Feb 11, 2019 |