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IGT4D11 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT4D11 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT4D11

Datasheet Details

Part number	IGT4D11
Manufacturer	GE
File Size	298.11 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT4D11 Datasheet
Additional preview pages of the IGT4D11 datasheet.

Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

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Published: Feb 11, 2019 |