IGT4D11 - Insulated Gate Bipolar Transistor

Key Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

IGT4D11 insulated gate bipolar transistor by GE - Datasheet Preview

Datasheet Details

Part number	IGT4D11
Manufacturer	GE
File Size	298.11 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT4D11 Datasheet

Other Datasheets by GE

Part Number	Description
IGT4D10	Insulated Gate Bipolar Transistor
IGT4E10	Insulated Gate Bipolar Transistor
IGT4E11	Insulated Gate Bipolar Transistor
IGT6D10	Insulated Gate Bipolar Transistor
IGT6D11	Insulated Gate Bipolar Transistor
IGT6D20	Insulated Gate Bipolar Transistor
IGT6D21	Insulated Gate Bipolar Transistor
IGT6E10	Insulated Gate Bipolar Transistor
IGT6E11	Insulated Gate Bipolar Transistor
IGT6E20	Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

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mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolartransistors. The device design and gate characteristics of the IGT'M Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.