IGT4E10 Overview
mTM1J~~~ Insulated Gate Bipolar Transistor IGT4D1 O,E~ ~Jr 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 il This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to...
IGT4E10 Key Features
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling -10 amps @ 100°C
- I :1~g::~~II~ .05511.391 .04811.nl
- 24516.221
- TERMEFPEERRAENTUCERE
- / POINT