IGT4E11 Key Features
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on
- 100 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling
- 10 amps @ 100°C
- ~~g::~;~ .05511.391
- 1 0-5.10925.162.74111
- Part: IGT4E11
- Manufacturer: GE
- Size: 298.11 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT4E10 | Insulated Gate Bipolar Transistor |
| IGT4D10 | Insulated Gate Bipolar Transistor |
| IGT4D11 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
IGT4E11 Description
mTMlJ~~~~ Insulated Gate Bipolar Transistor IGT4D11~E11 10 AMPERES 400, 500 VOLTS EQUIV. ROS(ON} = 0.27 il This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to...