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IGT6D10 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT6D10 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT6D10

Datasheet Details

Part number	IGT6D10
Manufacturer	GE
File Size	291.90 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D10 Datasheet
Additional preview pages of the IGT6D10 datasheet.

Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 150 ns typical.
Polysilicon MOS gate - Voltage controlled turn onloff.
High current handling -10 amps @ 100°C N-.

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Published: Feb 11, 2019 |