IGT6D10 Key Features
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on
- 150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn onloff
- High current handling -10 amps @ 100°C
- 55 to 150
- 55 to 150
- IGT6E10
IGT6D10 is Insulated Gate Bipolar Transistor manufactured by GE.
| Part Number | Description |
|---|---|
| IGT6D11 | Insulated Gate Bipolar Transistor |
| IGT6D20 | Insulated Gate Bipolar Transistor |
| IGT6D21 | Insulated Gate Bipolar Transistor |
| IGT6E10 | Insulated Gate Bipolar Transistor |
| IGT6E11 | Insulated Gate Bipolar Transistor |