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IGT6D11 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT6D11 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT6D11

Datasheet Details

Part number	IGT6D11
Manufacturer	GE
File Size	289.09 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D11 Datasheet
Additional preview pages of the IGT6D11 datasheet.

Product details

Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on -100 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 10 amps @ 100°C N-.

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Published: Feb 11, 2019 |