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IGT6D20 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT6D20 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT6D20

Datasheet Details

Part number	IGT6D20
Manufacturer	GE
File Size	294.88 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D20 Datasheet
Additional preview pages of the IGT6D20 datasheet.

Product details

Features

Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-.

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Other Datasheets by GE

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IGT6E20 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |