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IGT6D21 - Insulated Gate Bipolar Transistor

Product Overview

GE

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IGT6D21 Insulated Gate Bipolar Transistor by GE - Datasheet Preview — Datasheet preview – IGT6D21

Datasheet Details

Part number	IGT6D21
Manufacturer	GE
File Size	280.29 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6D21 Datasheet
Additional preview pages of the IGT6D21 datasheet.

Product details

Features

Low VCE(SAT) - 2.5Vtyp@20A.
Ultra-fast turn-on -150 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3).

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Published: Feb 11, 2019 |