• Part: IGT6E20
  • Manufacturer: GE
  • Size: 294.88 KB
Download IGT6E20 Datasheet PDF
IGT6E20 datasheet preview
IGT6E20 page 2
Page 2
IGT6E20 page 3
Page 3

IGT6E20 Key Features

  • Low VCE(SAT)
  • 2.3V typ @ 20A
  • 200 ns typical
  • Polysilicon MOS gate
  • Voltage controlled turn on/off
  • 20 amps @ 100°C
  • 35B(9.D9l MAX
  • 55 to 150
  • 55 to 150
  • IGT6E20

Related GE Datasheets

Part Number Description
IGT6E21 Insulated Gate Bipolar Transistor
IGT6E10 Insulated Gate Bipolar Transistor
IGT6E11 Insulated Gate Bipolar Transistor
IGT6D10 Insulated Gate Bipolar Transistor
IGT6D11 Insulated Gate Bipolar Transistor