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Insulated Gate Bipolar Transistor
IGT6D21,E21
20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0
This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics ofthe IGT'- Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
IGT6E21 Datasheet
