IGT8E20
Overview
- Low VCE(SAT) - 2.3V typ @ 20A
- Ultra-fast turn-on - 200 ns typical
- Polysilicon MOS gate - Voltage controlled turn on/off
- High current handling - 20 amps @ 100°C
| Part | IGT8E20 |
|---|---|
| Description | Insulated Gate Bipolar Transistor |
| Category | Transistor |
| Manufacturer | GE |
| Size | 290.75 KB |