IGT8E21
Overview
- Low VCE(SAT) - 2..5V typ @ 20A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate - Voltage controlled turn on/off
- High current handling - 20 amps @ 90° C N-CHANNfEl c o~
| Part | IGT8E21 |
|---|---|
| Description | Insulated Gate Bipolar Transistor |
| Category | Transistor |
| Manufacturer | GE |
| Size | 285.71 KB |