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IGT8E21 Datasheet Insulated Gate Bipolar Transistor

Manufacturer: GE

Overview: mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors. The device design and gate characteristics ofthe IGT'II Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between 25° C and 150° C offering extended power handling capability. The IGT'II Transistor is ideal for many high voltage switching applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Low VCE(SAT) - 2..5V typ @ 20A.
  • Ultra-fast turn-on -150 ns typical.
  • Polysilicon MOS gate - Voltage controlled turn on/off.
  • High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247.

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