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Insulated Gate Bipolar Transistor
20AMPEFlES 400, 500 VOLTS
EQUIV. RDS(ON) =0.145 n.
This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors. The device design and gate characteristics ofthe IGT'II Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
IGT8E21 Datasheet
